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inchange semiconductor product specification silicon npn power transistors BU902 description ? with to-3pn package ? high voltage ? high speed switching applications ? for color tv horizontal deflection circuits. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1100 v v ceo collector-emitter voltage open base 480 v v ebo emitter-base voltage open collector 7 v i c collector current 8 a i cm collector current-peak t p <5ms 15 a p t total power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction case 1.0 ??/w fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BU902 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0; 480 v v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0; 7 v v cesat collector-emitter saturation voltage i c =4a;i b =0.8a 5.0 v v besat base-emitter saturation voltage i c =4a;i b =0.8a 1.5 v i cbo collector cut-off current v cb =1100v;i e =0 1.0 ma i ebo emitter cut-off current v eb =5v;i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =5v 10 h fe-2 dc current gain i c =4a ; v ce =5v 5.5
inchange semiconductor product specification 3 silicon npn power transistors BU902 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)

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